W. Liu, W.C. Wang, H. Pan, C. Cheng, S. Feng, C. Yen, K.W. Lin
{"title":"新型功能负微分电阻异质结双极晶体管(NDR-HBT)","authors":"W. Liu, W.C. Wang, H. Pan, C. Cheng, S. Feng, C. Yen, K.W. Lin","doi":"10.1109/ESSDERC.2000.194760","DOIUrl":null,"url":null,"abstract":"A novel functional negative-differentialresistance heterojunction bipolar transistor (NDR-HBT) has been successfully fabricated and demonstrated. The studied device acts as a conventional HBT for the applied higher base current of IB=100μA/step. However, the NDR phenomenon with interesting topee-shaped current-voltage characteristics was observed under the applied base current of IB=2μA/step. These are attributed to the use of narrow base width and δ-doped sheet in the studied device. Besides, the N-shaped NDR phenomena are obviously observed under the applied tungsten light source. The peak-to-valley current ratio (PVCR) up to 1.5 is obtained for the base current IB=60μA. The photocurrent is about 1.01mA and keeps constantly under the applied higher base current.","PeriodicalId":354721,"journal":{"name":"30th European Solid-State Device Research Conference","volume":"136 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Novel Functional Negative-Differential-Resistance Heterojunction Bipolar Transistor (NDR-HBT)\",\"authors\":\"W. Liu, W.C. Wang, H. Pan, C. Cheng, S. Feng, C. Yen, K.W. Lin\",\"doi\":\"10.1109/ESSDERC.2000.194760\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel functional negative-differentialresistance heterojunction bipolar transistor (NDR-HBT) has been successfully fabricated and demonstrated. The studied device acts as a conventional HBT for the applied higher base current of IB=100μA/step. However, the NDR phenomenon with interesting topee-shaped current-voltage characteristics was observed under the applied base current of IB=2μA/step. These are attributed to the use of narrow base width and δ-doped sheet in the studied device. Besides, the N-shaped NDR phenomena are obviously observed under the applied tungsten light source. The peak-to-valley current ratio (PVCR) up to 1.5 is obtained for the base current IB=60μA. The photocurrent is about 1.01mA and keeps constantly under the applied higher base current.\",\"PeriodicalId\":354721,\"journal\":{\"name\":\"30th European Solid-State Device Research Conference\",\"volume\":\"136 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"30th European Solid-State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2000.194760\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"30th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2000.194760","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Novel Functional Negative-Differential-Resistance Heterojunction Bipolar Transistor (NDR-HBT)
A novel functional negative-differentialresistance heterojunction bipolar transistor (NDR-HBT) has been successfully fabricated and demonstrated. The studied device acts as a conventional HBT for the applied higher base current of IB=100μA/step. However, the NDR phenomenon with interesting topee-shaped current-voltage characteristics was observed under the applied base current of IB=2μA/step. These are attributed to the use of narrow base width and δ-doped sheet in the studied device. Besides, the N-shaped NDR phenomena are obviously observed under the applied tungsten light source. The peak-to-valley current ratio (PVCR) up to 1.5 is obtained for the base current IB=60μA. The photocurrent is about 1.01mA and keeps constantly under the applied higher base current.
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