快速电流脉冲mos深耗尽技术用于薄外延和离子注入层的刻划

Iee Journal on Solidstate and Electron Devices Pub Date : 1978-07-01 DOI:10.1049/IJ-SSED:19780041

P. Ladbrooke, R. S. Huang, J. Barnard

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摘要

本文描述了一种利用持续时间为几微秒的电流脉冲在薄层上进行自由载流子剖面测量的mos技术。该方法最大限度地减少了由于表面状态导致的结果失真，并能够确定直至半导体表面的轮廓

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Fast current pulse m.o.s. deep-depletion technique for profiling thin epitaxial and ion-implanted layers

An m.o.s. technique is described for making free-carrier profile measurements on thin layers using a current pulse of a few microseconds duration. The method minimises distortion of the results due to surface states and enables the profile right up to the semiconductor surface to be determined

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Iee Journal on Solidstate and Electron Devices

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