高功率工作的多栅极pHEMT建模

2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI:10.1109/EDSSC.2013.6628227

Cejun Wei, Yu Zhu, D. Bartle

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引用次数: 0

摘要

多栅极phemt具有低损耗、高功率、体积小等优点，是无线通信中开关电路的关键元件。在导通状态和一定功率下谐波劣化时的功率退阶是其大功率运行的一个重要问题。本文讨论了权力退步的机制。可以通过通态pHEMT的功率取决于饱和电流或最大可用通道电流。在多栅极pHEMT中，由于中心栅极或栅极的自热导致饱和通道电流大大降低，从而导致功率过早退步或增益崩溃。我们开发了一个多栅极phemt的自加热热模型，该模型可以预测功率步进和相关滞后发生时的功率水平。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Multi-gate pHEMT modeling for high-power operation

Multi-gate pHEMTs are key elements in switch circuits in wireless communication applications due to their low loss and high power capacity with relatively small sizes. A great concern on their high power operation is the power step-back at on-state and at certain power level with harmonics deteriorated. In this paper we discuss the mechanism of power step-back. The power that can pass through an on-state pHEMT is dependent on saturation current, or the maximum available channel current. A premature power step-back or gain collapse in a multi-gate pHEMT is due to largely reduced saturation channel current caused by self-heating in center gate or gates. We developed a self-heating thermal model for multi-gate pHEMTs that can predict power level at that the power step-back and related hysteresis occur.

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2013 IEEE International Conference of Electron Devices and Solid-state Circuits

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