{"title":"时钟存储元件对过程变化的鲁棒性","authors":"Joosik Moon, M. Aktan, V. Oklobdzija","doi":"10.1109/ASICON.2009.5351566","DOIUrl":null,"url":null,"abstract":"In this work, different types of clocked storage elements are compared in terms of the impact of process variations on their performances. Transistor sizes are obtained from energy-efficient characteristics and used in the simulation to measure the delay variations caused by process variations. The structure of a clocked storage element affects its robustness to process variations.","PeriodicalId":446584,"journal":{"name":"2009 IEEE 8th International Conference on ASIC","volume":"92 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Clocked storage elements robust to process variations\",\"authors\":\"Joosik Moon, M. Aktan, V. Oklobdzija\",\"doi\":\"10.1109/ASICON.2009.5351566\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, different types of clocked storage elements are compared in terms of the impact of process variations on their performances. Transistor sizes are obtained from energy-efficient characteristics and used in the simulation to measure the delay variations caused by process variations. The structure of a clocked storage element affects its robustness to process variations.\",\"PeriodicalId\":446584,\"journal\":{\"name\":\"2009 IEEE 8th International Conference on ASIC\",\"volume\":\"92 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-12-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE 8th International Conference on ASIC\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASICON.2009.5351566\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE 8th International Conference on ASIC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASICON.2009.5351566","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Clocked storage elements robust to process variations
In this work, different types of clocked storage elements are compared in terms of the impact of process variations on their performances. Transistor sizes are obtained from energy-efficient characteristics and used in the simulation to measure the delay variations caused by process variations. The structure of a clocked storage element affects its robustness to process variations.