基于解析模型和仿真的三金属隧道场效应晶体管器件的功函数分析显示了优异的器件性能

R. Bose, J. Roy
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引用次数: 1

摘要

在这项研究中,作者提出了一种工作函数工程(WFE)三金属(TM)隧道场效应晶体管(TFET)器件,与传统的双栅TFET和双金属TFET器件相比,该器件具有更低的亚阈值斜率(SS)和更好的通断电流比。建立了一个分析模型来研究该装置的性能。为了验证我们提出的数学模型,我们在2D TCAD(技术计算机辅助设计)Sentaurus器件模拟器的帮助下,对这些TFET器件进行了基于仿真的研究。本文提出的三金属(TM) TFET器件的源侧n +袋提高了隧穿概率,从而增加了通断电流,而关断电流由靠近漏极的另一个n -袋控制。TM WFE TFET具有较低的亚阈值斜率(小于10 mV/decade)、较高的跨导率(约为10 (cid:0) 4 S/μm)、较低的能量延迟积(24.601 fJ - ns/μm),使该器件更适合数字逻辑和射频(RF)应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analytical model and simulation-based analysis of a work function engineered triple metal tunnel field-effect transistor device showing excellent device performance
In this study, the authors propose a work function engineered (WFE) triple metal (TM) tunnel field ‐ effect transistor (TFET) device, which exhibits lower subthreshold slope (SS) and better on to off current ratio in comparison with conventional double gate TFET and dual metal TFET device. An analytical model is formulated to study the performance of the proposed device. A simulation ‐ based study of these TFET devices has been carried out with the help of 2D TCAD (Technology Computer Aided Design) Sentaurus device simulator for different channel length values in order to validate our proposed mathematical model. The source side n þ pocket in the proposed triple metal (TM) TFET device enhances tunnelling probability thus increasing on current and off current is controlled by another n ‐ pocket near drain side. Significantly lower subthreshold slope (less than 10 mV/decade), high transconductance (in the order of 10 (cid:0) 4 S/μm), low energy ‐ delay product (24.601 fJ ‐ ns/μm) obtained for TM WFE TFET makes this device more suitable for digital logic and RF (Radio Frequency) application.
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