基于 MOS 的温度和工艺不变基准电流发生电路，可实现 1V 以下电压运行

Proceedings of the 2003 International Symposium on Low Power Electronics and Design, 2003. ISLPED '03. Pub Date : 2003-08-25 DOI:10.1109/LPE.2003.1231862

Stephen Tang, S. Narendra, V. De

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引用次数: 22

摘要

在采用 150 纳米逻辑工艺技术实现的原型芯片上进行的测量验证了两个 1V 以下 MOS 基准电流发生器电路的理论，并表明在极端工艺和温度条件下，电流变化可减少 /spl sim/2/spl times/。

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Temperature and process invariant MOS-based reference current generation circuits for sub-1V operation

Measurements on a prototype chip, implemented in a 150 nm logic process technology, validate the theories for two sub-1V MOS reference current generator circuits and show that /spl sim/2/spl times/ reduction in current variation is achievable across extremes of both process and temperature.

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Proceedings of the 2003 International Symposium on Low Power Electronics and Design, 2003. ISLPED '03.

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