Deepali Pathak, SriHarsha Vardhan G, N. Vamsi, A. Dutta
{"title":"用于无电池RFID应用的宽输入范围差分双频射频能量收集系统","authors":"Deepali Pathak, SriHarsha Vardhan G, N. Vamsi, A. Dutta","doi":"10.1109/VLSIDCS47293.2020.9179947","DOIUrl":null,"url":null,"abstract":"A wide input range differential dual band RF energy harvesting system has been designed and presented for a battery less RFID applications. The proposed architecture includes an off-chip differential dual band antenna with differnetial dual band matching network followed by a CMOS cross coupled rectifier for RF-DC conversion which replaces a battery in several RFID applications. The proposed differential dual band matching network for the rectifier provides a peak efficiency of 60% at -12 dBm at 0.9 GHz and 64% at -16 dBm at 1.8 GHz. The proposed architecture achieves better efficiency for lower input power ranges from -20 dBm to 8 dBm which implemented using UMC 0.18µm CMOS Technology.","PeriodicalId":446218,"journal":{"name":"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Wide Input Range Differential Dual Band RF Energy Harvesting System for Battery-Less RFID Applications\",\"authors\":\"Deepali Pathak, SriHarsha Vardhan G, N. Vamsi, A. Dutta\",\"doi\":\"10.1109/VLSIDCS47293.2020.9179947\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A wide input range differential dual band RF energy harvesting system has been designed and presented for a battery less RFID applications. The proposed architecture includes an off-chip differential dual band antenna with differnetial dual band matching network followed by a CMOS cross coupled rectifier for RF-DC conversion which replaces a battery in several RFID applications. The proposed differential dual band matching network for the rectifier provides a peak efficiency of 60% at -12 dBm at 0.9 GHz and 64% at -16 dBm at 1.8 GHz. The proposed architecture achieves better efficiency for lower input power ranges from -20 dBm to 8 dBm which implemented using UMC 0.18µm CMOS Technology.\",\"PeriodicalId\":446218,\"journal\":{\"name\":\"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIDCS47293.2020.9179947\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIDCS47293.2020.9179947","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Wide Input Range Differential Dual Band RF Energy Harvesting System for Battery-Less RFID Applications
A wide input range differential dual band RF energy harvesting system has been designed and presented for a battery less RFID applications. The proposed architecture includes an off-chip differential dual band antenna with differnetial dual band matching network followed by a CMOS cross coupled rectifier for RF-DC conversion which replaces a battery in several RFID applications. The proposed differential dual band matching network for the rectifier provides a peak efficiency of 60% at -12 dBm at 0.9 GHz and 64% at -16 dBm at 1.8 GHz. The proposed architecture achieves better efficiency for lower input power ranges from -20 dBm to 8 dBm which implemented using UMC 0.18µm CMOS Technology.