二维量子输运装置的维格纳和泊松方程自洽解建模

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) Pub Date : 2000-09-06 DOI:10.1109/SISPAD.2000.871207

Zhiyi Han, N. Goldsman, Chung-Kai Lin

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引用次数: 6

摘要

提出了一种模拟纳米级半导体器件中量子输运的新方法。该方法基于装置内泊松方程和维格纳方程的自洽解。采用球谐法将维格纳方程转化为易于处理的表达式。结果提供了分布函数及其在整个装置中的平均值。该方法已应用于MOSFET和BJT。量子效应的加入降低了载流子在势能垒附近的浓度，导致终端电流降低。

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2-D quantum transport device modeling by self-consistent solution of the Wigner and Poisson equations

A new approach for simulating quantum transport in nanoscale semiconductor devices is presented. The method is based on the self-consistent solution of the Poisson and Wigner equations within a device. The spherical harmonic approach is used to transform the Wigner equation into a tractable expression. The results provide the distribution function and its averages throughout the device. The method has been applied to a MOSFET and a BJT. Inclusion of quantum effects reduces carrier concentrations near potential energy barriers, leading to reduced terminal current.

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来源期刊

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)

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