Projected Susceptibilities of VHSIC/VLSIC Devices to the Year 2000 Electromagnetic Environment

With proper doping of Class IIIA and IVA transitional elements (primarily germanium, silicon, and gallium) with selected impurities, semiconducting devices offering detection, amplification, and switching properties are obtainable. Originally, diodes and transistors were fabricated on silicon and germanium substrates only as single pn junctions or as pnp/npn junction sets, respectively. The next logical step was the integration of ordered sets of diodes and transistors on a common substrate to produce functional circuits.