闪存的高能效缓冲结构

W. Huang, Ching-Kuo Chen, Chin-Hsing Chen, C. C. Cheng
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引用次数: 7

摘要

低能耗是移动设备设计中的一个重要考虑因素。快闪记忆体在这类应用中是必不可少的,而减少能量消耗的一个解决方案是在快闪记忆体储存系统中包含缓冲层。传统的读写缓冲架构不适合闪存,因此我们开发了一种针对本研究中描述的闪存特性的最佳只读写入缓冲架构。我们提出了一种自适应的灰色决策策略,与最近最少使用的和闪存感知的缓冲策略相比,有效地减少了写操作的数量,减少了15%和35%的能耗,基于我们的最佳只读写入缓冲架构。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Energy-Efficient Buffer Architecture for Flash Memory
Lower energy consumption is an important consideration in the design of mobile devices. Flash memory is essential in such applications, and one solution for reducing energy consumption is to include a buffer layer in the flash memory storage system. The traditional read/write buffer architecture is not suitable for flash memory, so we developed an optimal-read only-write buffer architecture tailored to the properties of flash memory described in this study. We propose an adaptive Grey decision policy for efficiently decrease the number of write operations to reduce energy consumption by 15% and 35% compared to the least recently used and flash-aware buffer policies, based on our optimal-read only-write buffer architecture.
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