仅使用直流测量的自热估计新方法

2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) Pub Date : 2018-05-03 DOI:10.1109/ULIS.2018.8354756

C. A. Mori, P. Agopian, J. Martino

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引用次数: 1

摘要

本文报道了一种利用晶体管效率的逆函数作为晶体管通道功率的函数来估计器件热阻的新方法。这种新方法的优点是只使用直流测量，与本工作中研究的UTBB SOI的脉冲方法相比，在估计由SHE引起的通道温升时误差小于4%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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New method for self-heating estimation using only DC measurements

This paper reports a new method for estimating the thermal resistance of a device using the inverse of the transistor efficiency as a function of the power applied to the transistor's channel. The advantages of this new method are the use of DC measurements only and errors smaller than 4% in the estimation of the channel temperature increase due to the SHE when compared to a pulsed method for the UTBB SOI studied in this work.

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2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

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