高温导电afm技术在软失效分析中的应用

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI:10.1109/IPFA.2009.5232667

Lim Soon Huat, Sun Wanxin, V. Narang, J. Chin

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引用次数: 1

摘要

本文演示了用于高温导电afm分析的Veeco加热阶段，这对于揭示与软失效相关的泄漏接触非常有用。在80°C下对SOI晶体管进行CAFM，以隔离泄漏的多晶硅栅极触点。在高温下进行了纳米探测，结果与高温CAFM数据有很强的相关性。高温CAFM有助于隔离SRAM存储单元中失效晶体管中较高的栅极氧化物泄漏电流。

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High-temperature Conductive-AFM technique for resolution of soft failures

This paper demonstrates the Veeco heating stage for high temperature Conductive-AFM analysis which is very useful for revealing leaky contacts associated with soft failures. CAFM at 80°C is performed on SOI transistors to isolate leaky polysilicon gate contacts. Nanoprobing at high temperature is performed and it shows strong correlation with the high temperature CAFM data. High temperature CAFM helped to isolate higher gate oxide leakage current in the failing transistor in SRAM memory cell.

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来源期刊

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

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