4mb SPI闪存兼容相变存储器

2007 International Symposium on VLSI Design, Automation and Test (VLSI-DAT) Pub Date : 2007-04-25 DOI:10.1109/VDAT.2007.373202

S. Sheu, Lieh‐Chiu Lin, Wen-Han Wang, P. Chiang, K. Su, M. Kao, M. Tsai

{"title":"4mb SPI闪存兼容相变存储器","authors":"S. Sheu, Lieh‐Chiu Lin, Wen-Han Wang, P. Chiang, K. Su, M. Kao, M. Tsai","doi":"10.1109/VDAT.2007.373202","DOIUrl":null,"url":null,"abstract":"A 4-Mb with SPI serial interface phase-change memory which is completely compatible with the traditional SPI flash memory is implemented in this study. The peripheral circuit is much simpler than flash memory. The 512 Kb sector erase time is less than 7 ms while the 4 Mb bulk erase time is 80 ms only.","PeriodicalId":137915,"journal":{"name":"2007 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"4-Mb SPI Flash Compatible Phase-Change Memory\",\"authors\":\"S. Sheu, Lieh‐Chiu Lin, Wen-Han Wang, P. Chiang, K. Su, M. Kao, M. Tsai\",\"doi\":\"10.1109/VDAT.2007.373202\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 4-Mb with SPI serial interface phase-change memory which is completely compatible with the traditional SPI flash memory is implemented in this study. The peripheral circuit is much simpler than flash memory. The 512 Kb sector erase time is less than 7 ms while the 4 Mb bulk erase time is 80 ms only.\",\"PeriodicalId\":137915,\"journal\":{\"name\":\"2007 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)\",\"volume\":\"86 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-04-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VDAT.2007.373202\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VDAT.2007.373202","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本研究实现了一种与传统SPI闪存完全兼容的4mb带SPI串行接口的相变存储器。外围电路比闪存简单得多。512kb扇区擦除时间小于7ms，而4mb块擦除时间仅为80ms。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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4-Mb SPI Flash Compatible Phase-Change Memory

A 4-Mb with SPI serial interface phase-change memory which is completely compatible with the traditional SPI flash memory is implemented in this study. The peripheral circuit is much simpler than flash memory. The 512 Kb sector erase time is less than 7 ms while the 4 Mb bulk erase time is 80 ms only.

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来源期刊

2007 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)

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