{"title":"寻找最佳电压和频率以缩短功率受限的测试时间","authors":"P. Venkataramani, S. Sindia, V. Agrawal","doi":"10.1109/VTS.2013.6548882","DOIUrl":null,"url":null,"abstract":"In a digital test, supply voltage (V<sub>DD</sub>), clock frequency (f<sub>test</sub>), peak power (P<sub>MAX</sub>) and test time (TT) are related parameters. For a given limit P<sub>MAX</sub> = P<sub>MAX func</sub>, normally set by functional specification, we find the optimum V<sub>DD</sub> = V<sub>DDopt</sub> and f<sub>test</sub> = f<sub>opt</sub> to minimize TT. A solution is derived analytically from the technology-dependent characterization of semiconductor devices. It is shown that at V<sub>DDopt</sub> the peak power any test cycle consumes just equals P<sub>MAX func</sub> and f<sub>test</sub> is fastest that the critical path at V<sub>DDopt</sub> will allow. The paper demonstrates how test parameters can be obtained numerically from MATLAB, or experimentally by bench test equipment like National Instruments' ELVIS. This optimization can cut the test time of ISCAS'89 benchmarks in 180nm CMOS into half.","PeriodicalId":138435,"journal":{"name":"2013 IEEE 31st VLSI Test Symposium (VTS)","volume":"253 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Finding best voltage and frequency to shorten power-constrained test time\",\"authors\":\"P. Venkataramani, S. Sindia, V. Agrawal\",\"doi\":\"10.1109/VTS.2013.6548882\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In a digital test, supply voltage (V<sub>DD</sub>), clock frequency (f<sub>test</sub>), peak power (P<sub>MAX</sub>) and test time (TT) are related parameters. For a given limit P<sub>MAX</sub> = P<sub>MAX func</sub>, normally set by functional specification, we find the optimum V<sub>DD</sub> = V<sub>DDopt</sub> and f<sub>test</sub> = f<sub>opt</sub> to minimize TT. A solution is derived analytically from the technology-dependent characterization of semiconductor devices. It is shown that at V<sub>DDopt</sub> the peak power any test cycle consumes just equals P<sub>MAX func</sub> and f<sub>test</sub> is fastest that the critical path at V<sub>DDopt</sub> will allow. The paper demonstrates how test parameters can be obtained numerically from MATLAB, or experimentally by bench test equipment like National Instruments' ELVIS. This optimization can cut the test time of ISCAS'89 benchmarks in 180nm CMOS into half.\",\"PeriodicalId\":138435,\"journal\":{\"name\":\"2013 IEEE 31st VLSI Test Symposium (VTS)\",\"volume\":\"253 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-04-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE 31st VLSI Test Symposium (VTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VTS.2013.6548882\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 31st VLSI Test Symposium (VTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTS.2013.6548882","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Finding best voltage and frequency to shorten power-constrained test time
In a digital test, supply voltage (VDD), clock frequency (ftest), peak power (PMAX) and test time (TT) are related parameters. For a given limit PMAX = PMAX func, normally set by functional specification, we find the optimum VDD = VDDopt and ftest = fopt to minimize TT. A solution is derived analytically from the technology-dependent characterization of semiconductor devices. It is shown that at VDDopt the peak power any test cycle consumes just equals PMAX func and ftest is fastest that the critical path at VDDopt will allow. The paper demonstrates how test parameters can be obtained numerically from MATLAB, or experimentally by bench test equipment like National Instruments' ELVIS. This optimization can cut the test time of ISCAS'89 benchmarks in 180nm CMOS into half.