采用导电金属栅极堆栈调谐，可用于10nm及以上节点，具有Multi-VT选项的高可扩展体FinFET器件

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers Pub Date : 2014-06-09 DOI:10.1109/VLSIT.2014.6894359

L. Ragnarsson, S. Chew, H. Dekkers, M. T. Luque, B. Parvais, A. De Keersgieter, K. Devriendt, A. Van Ammel, T. Schram, N. Yoshida, A. Phatak, K. Han, B. Colombeau, A. Brand, N. Horiguchi, A. Thean

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引用次数: 26

摘要

描述了具有高度保形ALD TiN/TiAl/TiN的可扩展多vt RMG CMOS集成工艺。多vt是通过使用两个不同的选项的金属门调谐实现的。第一种方法是控制底垒厚度，第二种方法是向功功能金属中注入氮气。通过调节TiAl下的TiN底势垒厚度，实现了有效功函数(eWF)约400 mV的位移，而通过在ALD TiN/TiAl/TiN中注入氮气，实现了200 mV以上的位移。栅极堆Tinv、JG、DIT和可靠性以及器件性能均不受多VT过程的影响。

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Highly scalable bulk FinFET Devices with Multi-VT options by conductive metal gate stack tuning for the 10-nm node and beyond

A scalable multi-VT enabled RMG CMOS integration process with highly conformal ALD TiN/TiAl/TiN is described. The multi-VT is implemented by metal gate tuning using two different options. The first relies on bottom-barrier thickness control, the second on implantation of nitrogen into the work function metal. A shift in the effective work function (eWF) of ~400 mV is realized by adjusting the TiN bottom barrier thickness underneath TiAl, while over 200 mV shifts are achieved by means of implantation of nitrogen into ALD TiN/TiAl/TiN. The gate-stack Tinv, JG, DIT and reliability as well as the device performance are shown to be unaffected by the multi VT process.

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来源期刊

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers

CiteScore

3.40

自引率

0.00%

发文量