基于“耗尽隔离效应”的“自我偏置”SOI MOSFET

1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345) Pub Date : 1999-10-04 DOI:10.1109/SOI.1999.819846

M. Terauchi, K. Terada

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引用次数: 1

摘要

提出了一种基于体电位控制的SOI MOSFET结构。在导通状态下，其体电位通过栅极耗尽层与外部体端电隔离，并通过漏极电流和漏极电压自动控制。预计目前的驾驶性能将提高30%以上。

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'Self-body-biased' SOI MOSFET through 'depletion isolation effect'

A new SOI MOSFET structure utilizing a novel body potential control scheme is proposed. In its 'on' state, its body potential is electrically isolated from the external body terminal by the gate depletion layer, and is controlled automatically through the drain current and drain voltage. More than 30% improvement in current drivability is predicted.

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来源期刊

1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)

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