{"title":"高压SiC功率开关器件的器件选项","authors":"J. Cooper, Y. Sui, X. Wang, G. Walden","doi":"10.1109/DRC.2005.1553113","DOIUrl":null,"url":null,"abstract":"Silicon carbide power switching devices have made remarkable progress in the past decade. As blocking voltage increases, the resistance of power switches becomes dominated by the drift region, and the advantage of SiC over silicon increases. This is illustrated by the degree to which SiC unipolar devices are approaching their theoretical limits at blocking voltages around 10 kV. Efforts are currently underway to develop power switching devices for the 15-25 kV regime","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Device options for high-voltage SiC power switching devices\",\"authors\":\"J. Cooper, Y. Sui, X. Wang, G. Walden\",\"doi\":\"10.1109/DRC.2005.1553113\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Silicon carbide power switching devices have made remarkable progress in the past decade. As blocking voltage increases, the resistance of power switches becomes dominated by the drift region, and the advantage of SiC over silicon increases. This is illustrated by the degree to which SiC unipolar devices are approaching their theoretical limits at blocking voltages around 10 kV. Efforts are currently underway to develop power switching devices for the 15-25 kV regime\",\"PeriodicalId\":306160,\"journal\":{\"name\":\"63rd Device Research Conference Digest, 2005. DRC '05.\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"63rd Device Research Conference Digest, 2005. DRC '05.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2005.1553113\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"63rd Device Research Conference Digest, 2005. DRC '05.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2005.1553113","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Device options for high-voltage SiC power switching devices
Silicon carbide power switching devices have made remarkable progress in the past decade. As blocking voltage increases, the resistance of power switches becomes dominated by the drift region, and the advantage of SiC over silicon increases. This is illustrated by the degree to which SiC unipolar devices are approaching their theoretical limits at blocking voltages around 10 kV. Efforts are currently underway to develop power switching devices for the 15-25 kV regime
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