非均匀空间机械应变诱导mosfet的非对称磁隧电导

2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI:10.1109/ESSDERC.2014.6948765

A. E. P. D. los, E. Gutiérrez-D., J. Reyes, F. Guarín

{"title":"非均匀空间机械应变诱导mosfet的非对称磁隧电导","authors":"A. E. P. D. los, E. Gutiérrez-D., J. Reyes, F. Guarín","doi":"10.1109/ESSDERC.2014.6948765","DOIUrl":null,"url":null,"abstract":"Through the measurement of the magneto-conductance properties of the reverse-biased Drain-Bulk (DB) junction of a MOSFET, we found the conductance of the active channel region, nearby the DB junction, is not space homogeneous, but it shows better conductance properties towards the edges than in the middle of the channel. Such a non-homogeneous channel conductance is attributed to the asymmetrical distribution of the mechanical strain used to enhance the carrier mobility.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Non-homogeneous space mechanical strain induces asymmetrical magneto-tunneling conductance in MOSFETs\",\"authors\":\"A. E. P. D. los, E. Gutiérrez-D., J. Reyes, F. Guarín\",\"doi\":\"10.1109/ESSDERC.2014.6948765\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Through the measurement of the magneto-conductance properties of the reverse-biased Drain-Bulk (DB) junction of a MOSFET, we found the conductance of the active channel region, nearby the DB junction, is not space homogeneous, but it shows better conductance properties towards the edges than in the middle of the channel. Such a non-homogeneous channel conductance is attributed to the asymmetrical distribution of the mechanical strain used to enhance the carrier mobility.\",\"PeriodicalId\":262652,\"journal\":{\"name\":\"2014 44th European Solid State Device Research Conference (ESSDERC)\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-11-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 44th European Solid State Device Research Conference (ESSDERC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2014.6948765\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 44th European Solid State Device Research Conference (ESSDERC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2014.6948765","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

通过测量MOSFET的反偏漏极-体积(DB)结的磁导特性，我们发现DB结附近的有源沟道区域的电导不是空间均匀的，但它向边缘的电导特性优于通道中间的电导特性。这种非均匀通道电导归因于用于增强载流子迁移率的机械应变的不对称分布。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Non-homogeneous space mechanical strain induces asymmetrical magneto-tunneling conductance in MOSFETs

Through the measurement of the magneto-conductance properties of the reverse-biased Drain-Bulk (DB) junction of a MOSFET, we found the conductance of the active channel region, nearby the DB junction, is not space homogeneous, but it shows better conductance properties towards the edges than in the middle of the channel. Such a non-homogeneous channel conductance is attributed to the asymmetrical distribution of the mechanical strain used to enhance the carrier mobility.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2014 44th European Solid State Device Research Conference (ESSDERC)

自引率

0.00%

发文量