一种精度为5mv的FLASH多级存储自适应编程方法

Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285) Pub Date : 2002-08-07 DOI:10.1109/CICC.2002.1012779

L. Engh, A. Kordesch, C. Mai-Liu

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引用次数: 0

摘要

所提出的多级存储记忆系统采用自适应方法，在每个连续的程序周期中改进单元模型，并适应单元变化和噪声。在8个周期内实现5 mV的精度，总计125 /spl mu/s。在一个0.5 /spl mu/m的SSI FLASH过程中，算法控制电路占用1mm /sup / 2/的面积。

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A self adaptive programming method with 5 mV accuracy for multi-level storage in FLASH

The presented multi-level storage memory system uses a self-adaptive method that improves the cell model with each successive program cycle, and accommodates cell variations and noise. An accuracy of 5 mV is achieved within eight cycles, which total 125 /spl mu/s. Algorithm control circuits occupy 1 mm/sup 2/ of area in a 0.5 /spl mu/m SSI FLASH process.

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Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)

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