一种用于表征本地设备不匹配的测试结构

2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers. Pub Date : 2006-06-15 DOI:10.1109/VLSIC.2006.1705315

K. Agarwal, Frank Liu, C. McDowell, S. Nassif, K. Nowka, Meghann Palmer, D. Acharyya, J. Plusquellic

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引用次数: 116

摘要

我们提出了一个局部器件不匹配统计表征的测试结构。该结构包含以可寻址方式排列的密集分布的SRAM器件。在先进的65nm制程测试芯片上的测量结果显示空间相关性很小。我们通过改变阈值调节植入来改变器件的标称阈值电压，并观察到随着阈值缩放，标准差与平均值的比值变得更差。在提取的阈值电压统计数据中观察到的巨大变化表明，随机掺杂波动可能是相邻器件失配背后的原因

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A test structure for characterizing local device mismatches

We present a test structure for statistical characterization of local device mismatches. The structure contains densely populated SRAM devices arranged in an addressable manner. Measurements on a test chip fabricated in an advanced 65 nm process show little spatial correlation. We vary the nominal threshold voltage of the devices by changing the threshold-adjust implantations and observe that the ratio of standard deviation to mean gets worse with threshold scaling. The large variations observed in the extracted threshold voltage statistics indicate that the random doping fluctuation is the likely reason behind mismatch in the adjacent devices

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来源期刊

2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers.

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