使用PECVD SiO2作为栅极介质的inas沟道mos - modfet的直流和射频特性

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI:10.1109/ICIPRM.2010.5516253

H. Ho, Ta Fan, Geng-Ying Liau, Heng-Kuang Lin, P. Chiu, J. Chyi, C. Ko, T. Kuan, Meng-Kuei Hsieh, Wen-Chin Lee, C. Wann

{"title":"使用PECVD SiO2作为栅极介质的inas沟道mos - modfet的直流和射频特性","authors":"H. Ho, Ta Fan, Geng-Ying Liau, Heng-Kuang Lin, P. Chiu, J. Chyi, C. Ko, T. Kuan, Meng-Kuei Hsieh, Wen-Chin Lee, C. Wann","doi":"10.1109/ICIPRM.2010.5516253","DOIUrl":null,"url":null,"abstract":"Small-bandgap InAs channel materials are potential candidates for high-speed and low-power applications and have been demonstrated in AlSb/InAs/AlSb QWFETs. Taking advantage of their excellent transport properties, we successfully develop an InAs-channel metal-oxide-semiconductor modulation-doped field-effect transistor (MOS-MODFET) using 100-nm PECVD-deposited SiO2 dielectrics for gate dielectrics. A 2µm-gate-length depletion-mode InAs n-channel MOS-MODFET shows a maximum drain current of 270 mA/mm, a peak transconductance of 189 mS/mm, and a low output conductance of 18 mS/mm in dc characteristics, and a maximum current-gain cut-off frequency of 14.5 GHz and a maximum oscillation frequency of 24.0 GHz in rf performances. The InAs-channel MOS-MODFET presents potentials for further developing complementary circuit devices.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"214 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"DC and RF characteristics of InAs-channel MOS-MODFETs using PECVD SiO2 as gate dielectrics\",\"authors\":\"H. Ho, Ta Fan, Geng-Ying Liau, Heng-Kuang Lin, P. Chiu, J. Chyi, C. Ko, T. Kuan, Meng-Kuei Hsieh, Wen-Chin Lee, C. Wann\",\"doi\":\"10.1109/ICIPRM.2010.5516253\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Small-bandgap InAs channel materials are potential candidates for high-speed and low-power applications and have been demonstrated in AlSb/InAs/AlSb QWFETs. Taking advantage of their excellent transport properties, we successfully develop an InAs-channel metal-oxide-semiconductor modulation-doped field-effect transistor (MOS-MODFET) using 100-nm PECVD-deposited SiO2 dielectrics for gate dielectrics. A 2µm-gate-length depletion-mode InAs n-channel MOS-MODFET shows a maximum drain current of 270 mA/mm, a peak transconductance of 189 mS/mm, and a low output conductance of 18 mS/mm in dc characteristics, and a maximum current-gain cut-off frequency of 14.5 GHz and a maximum oscillation frequency of 24.0 GHz in rf performances. The InAs-channel MOS-MODFET presents potentials for further developing complementary circuit devices.\",\"PeriodicalId\":197102,\"journal\":{\"name\":\"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"214 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-07-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2010.5516253\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2010.5516253","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

小带隙InAs通道材料是高速和低功耗应用的潜在候选者，并已在AlSb/InAs/AlSb qwfet中得到证明。利用其优异的输运特性，我们成功地开发了一种inas通道金属氧化物半导体调制掺杂场效应晶体管(MOS-MODFET)，使用100 nm pecvd沉积的SiO2介电材料作为栅极介电材料。2µm栅长耗尽型InAs n沟道MOS-MODFET的最大漏极电流为270 mA/mm，峰值跨导为189 mS/mm，直流特性的低输出导率为18 mS/mm，射频性能的最大电流增益截止频率为14.5 GHz，最大振荡频率为24.0 GHz。inas通道MOS-MODFET具有进一步开发互补电路器件的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

DC and RF characteristics of InAs-channel MOS-MODFETs using PECVD SiO2 as gate dielectrics

Small-bandgap InAs channel materials are potential candidates for high-speed and low-power applications and have been demonstrated in AlSb/InAs/AlSb QWFETs. Taking advantage of their excellent transport properties, we successfully develop an InAs-channel metal-oxide-semiconductor modulation-doped field-effect transistor (MOS-MODFET) using 100-nm PECVD-deposited SiO2 dielectrics for gate dielectrics. A 2µm-gate-length depletion-mode InAs n-channel MOS-MODFET shows a maximum drain current of 270 mA/mm, a peak transconductance of 189 mS/mm, and a low output conductance of 18 mS/mm in dc characteristics, and a maximum current-gain cut-off frequency of 14.5 GHz and a maximum oscillation frequency of 24.0 GHz in rf performances. The InAs-channel MOS-MODFET presents potentials for further developing complementary circuit devices.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

自引率

0.00%

发文量