用于以太网供电应用的80V绝缘体上硅LDMOS晶体管的热保护

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1487970

A. Hastings, S. Maramreddy, M. Patoka

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引用次数: 1

摘要

本文介绍了一种基于键合硅片绝缘体上硅工艺的以太网供电器件控制器的通管热保护。1/spl ω / 80V LDMOS晶体管在典型故障条件下耗散高达8W。限流，紧密耦合的过温传感和漏源电压传感相结合，将测量的峰值结温限制在250/spl度/C以下。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Thermal protection of an 80V silicon-on-insulator LDMOS transistor for power-over-Ethernet applications

This paper describes thermal protection for the pass transistor of a power-over-Ethernet powered device controller developed on a bonded-wafer silicon-on-insulator process. The 1/spl Omega/, 80V LDMOS transistor dissipates up to 8W during a typical fault condition. Current limiting, tightly coupled over-temperature sensing, and drain-to-source voltage sensing combine to limit measured peak junction temperatures to less than 250/spl deg/C.

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Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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