{"title":"一款23/ 3db双增益低噪声放大器，适用于5ghz波段无线应用","authors":"Y. Aoki, N. Hayama, M. Fujii, H. Hida","doi":"10.1109/GAAS.2002.1049059","DOIUrl":null,"url":null,"abstract":"We have developed a wide-dynamic-range low-noise amplifier (LNA) based on InGaP/GaAs hetero bipolar transistors (HBTs) for 5-GHz-band wireless applications. With no external matching components, this dual-gain LNA (with a 20-dB gain attenuation function) has a very high performance; namely, a noise figure (NF) of 2.3 dB, a gain of 23 dB, an output 1-dB compression point(P/sub 1dB/) of 9.8 dBm, and a DC power consumption (P/sub dc/) of 28 mW at 3.0 V. Its figure of merit, defined as (gain/NF)/spl middot/(P/sub 1dB//Pd/sub dc/), is 3.3, which is the highest value in the C-band to date.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"A 23/3-dB dual-gain low-noise amplifier for 5-GHz-band wireless applications\",\"authors\":\"Y. Aoki, N. Hayama, M. Fujii, H. Hida\",\"doi\":\"10.1109/GAAS.2002.1049059\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have developed a wide-dynamic-range low-noise amplifier (LNA) based on InGaP/GaAs hetero bipolar transistors (HBTs) for 5-GHz-band wireless applications. With no external matching components, this dual-gain LNA (with a 20-dB gain attenuation function) has a very high performance; namely, a noise figure (NF) of 2.3 dB, a gain of 23 dB, an output 1-dB compression point(P/sub 1dB/) of 9.8 dBm, and a DC power consumption (P/sub dc/) of 28 mW at 3.0 V. Its figure of merit, defined as (gain/NF)/spl middot/(P/sub 1dB//Pd/sub dc/), is 3.3, which is the highest value in the C-band to date.\",\"PeriodicalId\":142875,\"journal\":{\"name\":\"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.2002.1049059\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2002.1049059","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 23/3-dB dual-gain low-noise amplifier for 5-GHz-band wireless applications
We have developed a wide-dynamic-range low-noise amplifier (LNA) based on InGaP/GaAs hetero bipolar transistors (HBTs) for 5-GHz-band wireless applications. With no external matching components, this dual-gain LNA (with a 20-dB gain attenuation function) has a very high performance; namely, a noise figure (NF) of 2.3 dB, a gain of 23 dB, an output 1-dB compression point(P/sub 1dB/) of 9.8 dBm, and a DC power consumption (P/sub dc/) of 28 mW at 3.0 V. Its figure of merit, defined as (gain/NF)/spl middot/(P/sub 1dB//Pd/sub dc/), is 3.3, which is the highest value in the C-band to date.
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