超低k/铜互连技术中的芯片封装交互

2007 8th International Conference on Electronic Packaging Technology Pub Date : 2007-08-01 DOI:10.1109/ICEPT.2007.4441569

X. Liu, T. Shaw, E. Liniger, M. Lane, G. Bonilla, J. Doyle, B. Herbst, D. Questad

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引用次数: 1

摘要

本文采用断裂力学的方法研究了超低k/铜互连的芯片封装相互作用。当晶圆片被切成芯片时，在芯片的边缘会产生缺陷。在封装的热应力作用下，这些缺陷会扩散到介质中，导致芯片失效。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Chip Package Interaction in Ultra Low-k/Copper Interconnect Technology

In this paper a methodology based on fracture mechanics has been used to investigate the chip package interaction of ultra low-k/copper interconnect. When a wafer is diced into chips, defects can be generated at the edge of the chips. Under the thermal stress from the package the defects can propagate into the dielectric and cause the chip failure.

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2007 8th International Conference on Electronic Packaging Technology

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