硫族化合物中热辅助阱限制传导的有效数值

E. Piccinini, M. Rudan, F. Buscemi, R. Brunetti
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引用次数: 0

摘要

本文从数值效率的角度重新审视了用于相变存储器件描述的非晶态材料阱限导的流体动力学模型。除其他特点外,本文提出的方法避免了迭代求解过程中涉及分布函数的积分计算,并使所提出的求解方案适合纳入通用设备模拟器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Efficient numerics for thermally-assisted trap-limited conduction in chalcogenides
The hydrodynamic model for the trap-limited conduction regime in amorphous materials, used in the description of phase-change memory devices, is re-examined from the viewpoint of numerical efficiency. Among other features, the approach presented here avoids the calculation of integrals involving the distribution function during the iterative solution, and makes the proposed solution scheme suitable for incorporation into general-purpose device simulators.
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