{"title":"硫族化合物中热辅助阱限制传导的有效数值","authors":"E. Piccinini, M. Rudan, F. Buscemi, R. Brunetti","doi":"10.1109/ESSDERC.2014.6948774","DOIUrl":null,"url":null,"abstract":"The hydrodynamic model for the trap-limited conduction regime in amorphous materials, used in the description of phase-change memory devices, is re-examined from the viewpoint of numerical efficiency. Among other features, the approach presented here avoids the calculation of integrals involving the distribution function during the iterative solution, and makes the proposed solution scheme suitable for incorporation into general-purpose device simulators.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"180 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Efficient numerics for thermally-assisted trap-limited conduction in chalcogenides\",\"authors\":\"E. Piccinini, M. Rudan, F. Buscemi, R. Brunetti\",\"doi\":\"10.1109/ESSDERC.2014.6948774\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The hydrodynamic model for the trap-limited conduction regime in amorphous materials, used in the description of phase-change memory devices, is re-examined from the viewpoint of numerical efficiency. Among other features, the approach presented here avoids the calculation of integrals involving the distribution function during the iterative solution, and makes the proposed solution scheme suitable for incorporation into general-purpose device simulators.\",\"PeriodicalId\":262652,\"journal\":{\"name\":\"2014 44th European Solid State Device Research Conference (ESSDERC)\",\"volume\":\"180 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-11-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 44th European Solid State Device Research Conference (ESSDERC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2014.6948774\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 44th European Solid State Device Research Conference (ESSDERC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2014.6948774","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Efficient numerics for thermally-assisted trap-limited conduction in chalcogenides
The hydrodynamic model for the trap-limited conduction regime in amorphous materials, used in the description of phase-change memory devices, is re-examined from the viewpoint of numerical efficiency. Among other features, the approach presented here avoids the calculation of integrals involving the distribution function during the iterative solution, and makes the proposed solution scheme suitable for incorporation into general-purpose device simulators.