“tanh”理想和有损ELIN积分器的研究

R. Bozomitu, D. Burdia, V. Cehan
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引用次数: 2

摘要

研究了“tanh”理想和有损ELIN(外部线性,内部非线性)积分器作为有源滤波器设计的基本组成部分。该电路采用状态空间合成得到,由“tanh”和“sinh/cosh”模块组成,可在双极技术中实现。结果表明,由于不存在合适的直流平衡,“tanh”理想的ELIN积分器难以在实际中使用。因此,要使这样一个能实现理想积分器传输特性的ELIN系统工作,输入直流电平必须为零。使用“tanh”有损ELIN积分器可以消除直流和低频操作的问题。所提出的结构的线性范围取决于“tanh”转移特性有效范围的准确性,这受到(从输入逆函数“arctanh”的现有条件)对偏置电流值的限制。研究了非线性“tanh”跨导的两个偏置电流在直流和交流工作时对“tanh”有损ELIN积分器的不平衡影响。最后,给出了0.8 /spl mu/m BiCMOS技术下的“tanh”有损ELIN积分器的核心布局。该电路已在0.8 /spl mu/m BiCMOS技术下进行了仿真,显示出良好的性能,证明了该结构的实用性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Study of "tanh" ideal and lossy ELIN integrators
The "tanh" ideal and lossy ELIN (externally linear, internally nonlinear) integrators as basic building blocks for active filter design are studied. The circuits have been obtained using state-space synthesis and are composed of "tanh" and "sinh/cosh" blocks which can be implemented in bipolar technology. It is shown that a "tanh" ideal ELIN integrator is difficult to use in practice because an appropriate dc equilibrium does not exist. Thus, for the working of such an ELIN system, which realizes the ideal integrator's transfer characteristic, the input dc level must be zero. The problems of dc and low frequency operation can be eliminated by using the "tanh" lossy ELIN integrator. The linearity range of the proposed structure depends on the accuracy in which the range of the "tanh" transfer characteristics is valid, this being limited (from the existing condition of the input inverse function, "arctanh") to the bias current value. Also studied is the unbalance effect of the two bias currents of the nonlinear "tanh" transconductance on the "tanh" lossy ELIN integrator in dc and ac operation. Finally, the core layout of the "tanh" lossy ELIN integrator in 0.8 /spl mu/m BiCMOS technology is presented. The proposed circuit has been simulated in 0.8 /spl mu/m BiCMOS technology showing remarkably good performance, and proving the practical applicability of the proposed structure.
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