Study of Process Transconductance for Understanding Gate Capacitance of FDSOI NCFET

We present simulation study of process transconductance parameter of FDSOI n-NCFET and FDSOI p-NCFET extracted from drain current vs drain-to-source voltage plots of respective devices in the linear region for different ferro-electric (PZT) thicknesses using FDSOI n-MOSFET and p-MOSFET as baseline devices which are identical with respective NCFET except the gate stack. The baseline device being in strong inversion, the carrier mobility is deduced from device process transconductance and used to determine the effective gate capacitance of NCFET for different PZT thicknesses.