在32纳米CMOS中128×128b高速宽和匹配线内容可寻址存储器

2011 Proceedings of the ESSCIRC (ESSCIRC) Pub Date : 2011-10-13 DOI:10.1109/ESSCIRC.2011.6044920

A. Agarwal, S. Hsu, S. Mathew, M. Anders, Himanshu Kaul, F. Sheikh, R. Krishnamurthy

{"title":"在32纳米CMOS中128×128b高速宽和匹配线内容可寻址存储器","authors":"A. Agarwal, S. Hsu, S. Mathew, M. Anders, Himanshu Kaul, F. Sheikh, R. Krishnamurthy","doi":"10.1109/ESSCIRC.2011.6044920","DOIUrl":null,"url":null,"abstract":"A 128-entry × 128b content addressable memory (CAM) design enables 145ps search operation in 1.0V, 32nm high-k metal-gate CMOS technology. A high-speed 16b wide dynamic AND match-line, combined with a fully static search-line and swapped XOR CAM cell simulations show a 49% reduction of search energy at iso-search delay of 145ps over an optimized high-performance conventional NOR-type CAM design, enabling 1.07fJ/bit/search operation. Scaling the supply voltage of the proposed CAM enables 0.3fJ/bit/search with 1.07ns search delay at 0.5V.","PeriodicalId":239979,"journal":{"name":"2011 Proceedings of the ESSCIRC (ESSCIRC)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"43","resultStr":"{\"title\":\"A 128×128b high-speed wide-and match-line content addressable memory in 32nm CMOS\",\"authors\":\"A. Agarwal, S. Hsu, S. Mathew, M. Anders, Himanshu Kaul, F. Sheikh, R. Krishnamurthy\",\"doi\":\"10.1109/ESSCIRC.2011.6044920\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 128-entry × 128b content addressable memory (CAM) design enables 145ps search operation in 1.0V, 32nm high-k metal-gate CMOS technology. A high-speed 16b wide dynamic AND match-line, combined with a fully static search-line and swapped XOR CAM cell simulations show a 49% reduction of search energy at iso-search delay of 145ps over an optimized high-performance conventional NOR-type CAM design, enabling 1.07fJ/bit/search operation. Scaling the supply voltage of the proposed CAM enables 0.3fJ/bit/search with 1.07ns search delay at 0.5V.\",\"PeriodicalId\":239979,\"journal\":{\"name\":\"2011 Proceedings of the ESSCIRC (ESSCIRC)\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-10-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"43\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 Proceedings of the ESSCIRC (ESSCIRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.2011.6044920\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 Proceedings of the ESSCIRC (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2011.6044920","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 43

摘要

128入口× 128b内容可寻址存储器(CAM)设计在1.0V, 32nm高k金属栅极CMOS技术下实现145ps的搜索操作。高速16b宽动态与匹配线，结合全静态搜索线和交换XOR CAM单元模拟显示，与优化的高性能传统nor型CAM设计相比，在等搜索延迟为145ps的情况下，搜索能量减少49%，实现1.07fJ/bit/搜索操作。缩放所提出的CAM的电源电压可实现0.3fJ/bit/搜索，0.5V时搜索延迟1.07ns。

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A 128×128b high-speed wide-and match-line content addressable memory in 32nm CMOS

A 128-entry × 128b content addressable memory (CAM) design enables 145ps search operation in 1.0V, 32nm high-k metal-gate CMOS technology. A high-speed 16b wide dynamic AND match-line, combined with a fully static search-line and swapped XOR CAM cell simulations show a 49% reduction of search energy at iso-search delay of 145ps over an optimized high-performance conventional NOR-type CAM design, enabling 1.07fJ/bit/search operation. Scaling the supply voltage of the proposed CAM enables 0.3fJ/bit/search with 1.07ns search delay at 0.5V.

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2011 Proceedings of the ESSCIRC (ESSCIRC)

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