下一代soc的泄漏感知设计

R. Zafalon
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引用次数: 1

摘要

我们描述了基本的设计技术,这些技术已被证明在实际设计环境中具有很大的泄漏优化潜力。它们的范围从门/电路级(例如双Vth, MTCMOS,休眠晶体管插入)到存储器块(例如阵列分区,子银行,位线分裂,缓存衰减,休眠状态存储器,利用局域性等)和架构风格(例如基于区域的自适应Vdd和体偏置,Vth跳变,功率门通等)。通过将低功耗技术应用于涵盖不同应用领域(包括高性能微处理器、内存/缓存结构和嵌入式多媒体处理的硬件平台)的专有设计而获得的重要工业解决方案的选择也将被报道。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Leakage aware design for next generation’s SOCs
We describe basic design techniques, that have proven to hold great potential for leakage optimization in practical design environments. They range from gate/circuit level (e.g. dual Vth, MTCMOS, sleep transistor insertion), to memory blocks (e.g. array partitioning, sub-banking, bit line splitting, cache decay, drowsy state memory, exploit locality, etc) and architectural styles (e.g. region-based adaptive Vdd and Body Biasing, Vth hopping, Power gating, etc.). A selection of significative industrial solutions obtained by the application of low-power techniques to proprietary designs covering different application domains (including high-performance microprocessors, memory/cache structure and hardware platforms for embedded multi-media processing) will be reported as well.
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