在高级合成中利用片外存储器访问模式

P. Panda, N. Dutt, A. Nicolau
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引用次数: 40

摘要

内存密集型行为通常包含合成为片外存储器的大型数组。随着片上和片外存储器访问延迟之间的差距越来越大,为了缓解存储器带宽瓶颈,必须利用现代存储器(例如页模式dram)的有效访问模式特征。我们的工作通过以下方式解决了这个问题:(a)为高级合成(HLS)建模现实的片外存储器访问模式,(b)提出算法来推断HLS与这些存储器访问模式的适用性,以及(c)转换输入行为以在HLS期间提供进一步的存储器访问优化。我们使用一套具有实际DRAM库模块的内存密集型基准测试来演示我们方法的实用性。实验结果表明,由于我们的优化技术,性能有了显著的提高(超过40%)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Exploiting off-chip memory access modes in high-level synthesis
Memory-intensive behaviors often contain large arrays that are synthesized into off-chip memories. With the increasing gap between on-chip and off-chip memory access delays, it is imperative to exploit the efficient access mode features of modern-day memories (e.g. page-mode DRAMs) in order to alleviate the memory bandwidth bottleneck. Our work addresses this issue by: (a) modeling realistic off-chip memory access modes for High-level Synthesis (HLS), (b) presenting algorithms to infer applicability of HLS with these memory access modes, and (c) transforming input behavior to provide further memory access optimizations during HLS. We demonstrate the utility of our approach using a suite of memory-intensive benchmarks with a realistic DRAM library module. Experimental results show a significant performance improvement (more than 40%) as a result of our optimization techniques.
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