基于进化方法的GSDG MOSFET小信号参数优化

Dibyendu Chowdhury, B. P. De, Kanchan Baran Maji, R. Kar, D. Mandal
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引用次数: 2

摘要

本文介绍了深亚微米模拟电路设计中栅极堆双栅MOSFET小信号参数的优化。本研究采用的进化优化算法为CRPSO (crazy -based Particle Swarm optimization)和ALCPSO (Aging Leader Challenger based PSO)。通过上述进化技术对GSDG MOSFET的跨导、关断电流等小信号参数以及其他不同的设计参数在亚阈值和饱和区域进行优化,使其在模拟域具有优异的电性能。与以往文献相比,ALCPSO和CRPSO技术得到的结果有很大的改善,可以考虑用于有用的装置设计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An Evolutionary Approach Based Optimization of Small Signal Parameters for GSDG MOSFET
This paper present the optimization of small- signal parameters for GSDG (Gate Stack Double Gate) MOSFET in deep submicron analogue circuit design. The evolutionary optimization algorithms taken for this study are CRPSO (Craziness-based Particle Swarm Optimization) and ALCPSO (Aging Leader Challenger based PSO). The small-signal parameters like trans-conductance, OFF-state current and different other design parameters of GSDG MOSFET are optimized in the regions of sub-threshold and saturation from the above mentioned evolutionary techniques to achieve the superior electrical performance of the MOSFET in the analogue domain. The results obtained from ALCPSO and CRPSO techniques are much improved as compared with the results of preceding literature and may be considered for the useful device design.
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