多晶硅发射极双极晶体管的仿真

30th European Solid-State Device Research Conference Pub Date : 2000-09-11 DOI:10.1109/ESSDERC.2000.194851

V. Palankovski, T. Grasser, M. Knaipp, S. Selberherr

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引用次数: 1

摘要

本文给出了多晶硅发射极双极结晶体管(BJTs)的二维模拟结果。为此，在我们的二维模拟器MINIMOS-NT中实现了适当的多晶硅接触模型。考虑到自热效应，模拟和测量的正向和输出器件特性很好地吻合。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Simulation of Polysilicon Emitter Bipolar Transistors

We present results of two-dimensional simulations of polysilicon emitter Bipolar Junction Transistors (BJTs). For that purpose proper polysilicon contact models have been implemented in our two-dimensional simulator MINIMOS-NT. By accounting for self-heating effects a good agreement between simulated and measured forward and output device characteristics is achieved.

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30th European Solid-State Device Research Conference

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