{"title":"低相位噪声宽带压控振荡器65nm射频CMOS低功耗应用","authors":"Zhou Mingzhu","doi":"10.1109/ICMMT.2012.6229997","DOIUrl":null,"url":null,"abstract":"A wideband LC VCO used in low power and phase noise applications is described. A phase noise model is utilized for its lower phase noise design. A switched capacitor array, two power supply and substrate noise filters are involved in the circuit. The phase noise imported by the MOS channel current and tank less resistance is modeled to give approximate evaluation of the circuit performance. The circuit has been implemented in a standard 65 nm CMOS technology. The test result indicates that the frequency of the VCO is from 750 MHz to 1.5 GHz, and the phase noise is -125.84 dBc/Hz @1 MHz in 1.21GHz. The chip consumes less than 2.25 mW with 1.2 V power supply, and occupies 0.7 mm2 areas.","PeriodicalId":421574,"journal":{"name":"2012 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"120 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A low phase noise wideband VCO in 65nm RF CMOS for low power applications\",\"authors\":\"Zhou Mingzhu\",\"doi\":\"10.1109/ICMMT.2012.6229997\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A wideband LC VCO used in low power and phase noise applications is described. A phase noise model is utilized for its lower phase noise design. A switched capacitor array, two power supply and substrate noise filters are involved in the circuit. The phase noise imported by the MOS channel current and tank less resistance is modeled to give approximate evaluation of the circuit performance. The circuit has been implemented in a standard 65 nm CMOS technology. The test result indicates that the frequency of the VCO is from 750 MHz to 1.5 GHz, and the phase noise is -125.84 dBc/Hz @1 MHz in 1.21GHz. The chip consumes less than 2.25 mW with 1.2 V power supply, and occupies 0.7 mm2 areas.\",\"PeriodicalId\":421574,\"journal\":{\"name\":\"2012 International Conference on Microwave and Millimeter Wave Technology (ICMMT)\",\"volume\":\"120 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-05-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 International Conference on Microwave and Millimeter Wave Technology (ICMMT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMMT.2012.6229997\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMMT.2012.6229997","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A low phase noise wideband VCO in 65nm RF CMOS for low power applications
A wideband LC VCO used in low power and phase noise applications is described. A phase noise model is utilized for its lower phase noise design. A switched capacitor array, two power supply and substrate noise filters are involved in the circuit. The phase noise imported by the MOS channel current and tank less resistance is modeled to give approximate evaluation of the circuit performance. The circuit has been implemented in a standard 65 nm CMOS technology. The test result indicates that the frequency of the VCO is from 750 MHz to 1.5 GHz, and the phase noise is -125.84 dBc/Hz @1 MHz in 1.21GHz. The chip consumes less than 2.25 mW with 1.2 V power supply, and occupies 0.7 mm2 areas.