大电流半导体开关封装中的电流处理和热考虑

APEC 2000. Fifteenth Annual IEEE Applied Power Electronics Conference and Exposition (Cat. No.00CH37058) Pub Date : 2000-02-06 DOI:10.1109/APEC.2000.826117

P. Dugdale, A. Woodworth

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引用次数: 4

摘要

针对大电流、低电感、低电阻封装的需要，国际整流器公司设计了Supertab MOSFET。这种新装置能够承载超过200a的电流。Supertab封装与现有功率MOSFET封装的不同之处在于，源连接是通过标签而不是引线进行的。本文讨论了实验工作和计算机建模相结合的方法来开发这种大电流分立半导体开关封装。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Current handling and thermal considerations in a high current semiconductor switch package

In response to the need for a high current, low inductance, low resistance package, International Rectifier have designed the Supertab MOSFET. This new device is capable of carrying currents in excess of 200 A. The Supertab package is different from existing power MOSFET packages in that the source connection is made through a tab rather than a lead. This paper presents a discussion of the way in which a combination of experimental work and computer modelling has been used to develop this high current discrete semiconductor switch package.

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APEC 2000. Fifteenth Annual IEEE Applied Power Electronics Conference and Exposition (Cat. No.00CH37058)

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