{"title":"79GHz可变增益低噪声放大器和28nm CMOS功率放大器，工作温度高达125°C","authors":"Alaa Medra, V. Giannini, D. Guermandi, P. Wambacq","doi":"10.1109/ESSCIRC.2014.6942052","DOIUrl":null,"url":null,"abstract":"This paper presents a 79GHz variable gain low-noise amplifier (LNA) and power amplifier (PA), both implemented in 28nm CMOS, and measured at temperatures from 27°C to 125°C. The 4-gain steps LNA and the 17dB gain PA are based on a multistage common source neutralized push-pull topology. The LNA achieves a gain of 23.8dB and a noise figure (NF) of 4.9dB, and the PA achieves a maximum power added efficiency (PAE) of 13.8% and a saturated output power (Psat) of 12.3dBm. At 125°C both the LNA and the PA are functional with NF <; 7dB and Psat >11dBm. This paper demonstrates the feasibility of using scaled CMOS technology (28nm) for automotive radars.","PeriodicalId":202377,"journal":{"name":"ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"46","resultStr":"{\"title\":\"A 79GHz variable gain low-noise amplifier and power amplifier in 28nm CMOS operating up to 125°C\",\"authors\":\"Alaa Medra, V. Giannini, D. Guermandi, P. Wambacq\",\"doi\":\"10.1109/ESSCIRC.2014.6942052\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a 79GHz variable gain low-noise amplifier (LNA) and power amplifier (PA), both implemented in 28nm CMOS, and measured at temperatures from 27°C to 125°C. The 4-gain steps LNA and the 17dB gain PA are based on a multistage common source neutralized push-pull topology. The LNA achieves a gain of 23.8dB and a noise figure (NF) of 4.9dB, and the PA achieves a maximum power added efficiency (PAE) of 13.8% and a saturated output power (Psat) of 12.3dBm. At 125°C both the LNA and the PA are functional with NF <; 7dB and Psat >11dBm. This paper demonstrates the feasibility of using scaled CMOS technology (28nm) for automotive radars.\",\"PeriodicalId\":202377,\"journal\":{\"name\":\"ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC)\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-11-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"46\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.2014.6942052\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2014.6942052","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 79GHz variable gain low-noise amplifier and power amplifier in 28nm CMOS operating up to 125°C
This paper presents a 79GHz variable gain low-noise amplifier (LNA) and power amplifier (PA), both implemented in 28nm CMOS, and measured at temperatures from 27°C to 125°C. The 4-gain steps LNA and the 17dB gain PA are based on a multistage common source neutralized push-pull topology. The LNA achieves a gain of 23.8dB and a noise figure (NF) of 4.9dB, and the PA achieves a maximum power added efficiency (PAE) of 13.8% and a saturated output power (Psat) of 12.3dBm. At 125°C both the LNA and the PA are functional with NF <; 7dB and Psat >11dBm. This paper demonstrates the feasibility of using scaled CMOS technology (28nm) for automotive radars.
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