InAlAs/In0.25Ga0.75As0.72Sb0.28/InGaAs双异质结双极晶体管的表征

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI:10.1109/ICIPRM.2010.5516128

Chao-Min Chang, Shu-Han Chen, Sheng-Yu Wang, J. Chyi

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引用次数: 3

摘要

本文报道了以InGaAsSb为基层制备低导通电压、高电流增益的inp基异质结双极晶体管(hbt)的特性。0.43 V的低导通电压是由于In0.25Ga0.75As072Sb0.28材料的带隙较小。尽管使用了大量be掺杂(9.0×1019 cm−3)的碱，但仍观察到74的高电流增益，这表明InGaAsSb材料具有较长的少数载流子寿命(τn)。此外，在单独的In0.25Ga0.75As072Sb0.28样品上也证明了5×10−8 Ω-cm2的低比接触电阻率。

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Characterization of InAlAs/In0.25Ga0.75As0.72Sb0.28/InGaAs double heterojunction bipolar transistors

We report on the characterization of InP-based heterojunction bipolar transistors (HBTs) with low turn-on voltage and high current gain by using InGaAsSb as the base layer. The low turn-on voltage of 0.43 V is attributed to the smaller band gap of the In0.25Ga0.75As072Sb0.28 material. High current gain of 74 is observed despite a heavily Be-doped (9.0×10¹⁹ cm⁻³) base is used, suggesting a long minority carrier lifetime (τn) in the InGaAsSb material. Moreover, low specific contact resistivity of 5×10⁻⁸ Ω-cm² is also demonstrated on separate In0.25Ga0.75As072Sb0.28 samples.

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2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

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