{"title":"定向电流逆转条件下空穴生长与电磁性能的实验研究","authors":"Dingrui Zhang, Weihai Fan, Jizhou Li, Kelly Yang","doi":"10.1109/CSTIC52283.2021.9461514","DOIUrl":null,"url":null,"abstract":"In this paper, void growth and EM performance under directional current (DC) reversal have been studied by PLR EM. It's found that without DC reversal, void growth mode has one category (void increasing) and statistical void growth rate is positively linearly correlated with MTTF. With DC reversal, void growth mode has three categories (void increasing, void transition, and void refilling) whose proportions have not significant difference with each other (proportions are around 30%), MTTF of void refilling is about one time higher than forward, and overall EM performance with DC reversal shows better than that without DC reversal (MTTF increased by ~16%) for the same cumulative electric resistance shift.","PeriodicalId":186529,"journal":{"name":"2021 China Semiconductor Technology International Conference (CSTIC)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Experimental Study on Void Growth and EM Performance Under Directional Current Reversal\",\"authors\":\"Dingrui Zhang, Weihai Fan, Jizhou Li, Kelly Yang\",\"doi\":\"10.1109/CSTIC52283.2021.9461514\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, void growth and EM performance under directional current (DC) reversal have been studied by PLR EM. It's found that without DC reversal, void growth mode has one category (void increasing) and statistical void growth rate is positively linearly correlated with MTTF. With DC reversal, void growth mode has three categories (void increasing, void transition, and void refilling) whose proportions have not significant difference with each other (proportions are around 30%), MTTF of void refilling is about one time higher than forward, and overall EM performance with DC reversal shows better than that without DC reversal (MTTF increased by ~16%) for the same cumulative electric resistance shift.\",\"PeriodicalId\":186529,\"journal\":{\"name\":\"2021 China Semiconductor Technology International Conference (CSTIC)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-03-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 China Semiconductor Technology International Conference (CSTIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSTIC52283.2021.9461514\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC52283.2021.9461514","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Experimental Study on Void Growth and EM Performance Under Directional Current Reversal
In this paper, void growth and EM performance under directional current (DC) reversal have been studied by PLR EM. It's found that without DC reversal, void growth mode has one category (void increasing) and statistical void growth rate is positively linearly correlated with MTTF. With DC reversal, void growth mode has three categories (void increasing, void transition, and void refilling) whose proportions have not significant difference with each other (proportions are around 30%), MTTF of void refilling is about one time higher than forward, and overall EM performance with DC reversal shows better than that without DC reversal (MTTF increased by ~16%) for the same cumulative electric resistance shift.
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