无结垂直MOSFET射频性能的数值研究

2010 International Symposium on Next Generation Electronics Pub Date : 2010-12-17 DOI:10.1109/ISNE.2010.5669162

Chih-Hsuan Tai, Jyi-Tsong Lin, Y. Eng, Kuan-Yu Lu, Cheng-Hsin Chen, Yu-Che Chang, Yi-Hsuan Fan

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摘要

在本文中，我们首次展示了无结垂直MOSFET (JLVMOS)的射频(RF)性能。数值模拟结果表明，与无结平面SOI MOSFET相比，JLVMOS可以获得更高的gm和更低的gd。这是因为垂直双栅极(DG)方案确实有助于增加栅极在通道区域的可控性，从而减少短通道效应(SCEs)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A numerical study of RF performance for a junctionless vertical MOSFET

In this paper, for the first time, we demonstrate the radio frequency (RF) performance of a junctionless vertical MOSFET (JLVMOS). According to the numerical simulation results, the JLVMOS can obtain higher gm, lower gd, in comparison to a junctionless planar SOI MOSFET. This because the vertical double-gate (DG) scheme truly helps to increase the gate controllability over the channel region, resulting in reduced short-channel effects (SCEs).

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2010 International Symposium on Next Generation Electronics

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