动态阈值电压MOSFET

F. J. De la Hidalga-W, M. Deen
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引用次数: 7

摘要

本文综述了动态阈值电压(DT) MOSFET的发展。源-衬底结的正向偏置在1984年首次被提出,作为早期策略的一部分,以提高MOSFET在缩放时的性能。这导致了四分之一微米技术的设计,在77 K下工作,使用0.6 V电压电源,并将衬底连接到固定的正向偏置电位。十年后,门控侧双极晶体管(gc - lnp)和SOI MOSFET的工作原理被证明是动态阈值器件,其衬底连接到栅极终端。SOI DTMOS是超低功耗CMOS应用的最佳选择,GC-LPNP用于一些紧凑的低功耗模拟电路。积极的技术改进导致了批量DTMOS的成功制造,其目前的代表在门延迟功耗产品方面表现出令人印象深刻的优点,远远高于传统的CMOS。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The dynamic threshold voltage MOSFET
In this contribution, the development of the dynamic threshold voltage (DT) MOSFET is reviewed. The forward-biasing of the source-substrate junction was proposed for the first time in 1984 as part of an early strategy to improve the MOSFET performance when scaled. This led to the design of a quarter-micron technology, operating at 77 K, using a 0.6 V voltage supply and with the substrate connected to a fixed forward biasing potential. Ten years later, the operation of the gate controlled lateral bipolar transistor (GC-LPNP) and the SOI MOSFET with the substrate tied to the gate terminal both operating as dynamic threshold devices, were demonstrated. The SOI DTMOS was the best alternative for ultra low power CMOS applications and the GC-LPNP was used for some compact low power analog circuits. Aggressive technological improvements led to successful fabrication of bulk DTMOS, whose current representatives show impressive figures of merit regarding gate delay-power consumption products, well above those of conventional CMOS.
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