一种具有真空触点和SiC-MOSFET的混合式直流断路器,用于无弧整流

K. Yasuoka, Tsuboi Yoshiki, Tatsuya Hayakawa, Tamanosuke Oide, N. Takeuchi
{"title":"一种具有真空触点和SiC-MOSFET的混合式直流断路器,用于无弧整流","authors":"K. Yasuoka, Tsuboi Yoshiki, Tatsuya Hayakawa, Tamanosuke Oide, N. Takeuchi","doi":"10.1109/HOLM.2016.7780005","DOIUrl":null,"url":null,"abstract":"DC circuit breakers (DCCBs) have been intensively studied because of increasing demand for DC power transmission. A hybrid DC circuit breaker that consists of mechanical switches, semiconductor devices, and metal-oxide varistor (MOV) elements is a promising device to provide low contact resistance and a fast interruption. The semiconductor devices are turned on by the sustaining voltage of arc discharge generated between the metal contacts of the mechanical switch. Though arc duration time in the hybrid DCCB is shorter than that in classical mechanical CBs, the arc causes contact erosion. In this report, an arcless commutation is described that uses the molten metal-bridge voltage at the opening stage of the contacts. The magnitude of the molten-bridge voltage is just enough to turn on SiC-MOSFET devices under specific conditions. Arcless commutation of DC current was observed with a Ag-W vacuum contact and SiC-MOSFETs at current values of 78∼140 A.","PeriodicalId":117231,"journal":{"name":"2016 IEEE 62nd Holm Conference on Electrical Contacts (Holm)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"A hybrid DC circuit breaker with vacuum contact and SiC-MOSFET for arcless commutation\",\"authors\":\"K. Yasuoka, Tsuboi Yoshiki, Tatsuya Hayakawa, Tamanosuke Oide, N. Takeuchi\",\"doi\":\"10.1109/HOLM.2016.7780005\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"DC circuit breakers (DCCBs) have been intensively studied because of increasing demand for DC power transmission. A hybrid DC circuit breaker that consists of mechanical switches, semiconductor devices, and metal-oxide varistor (MOV) elements is a promising device to provide low contact resistance and a fast interruption. The semiconductor devices are turned on by the sustaining voltage of arc discharge generated between the metal contacts of the mechanical switch. Though arc duration time in the hybrid DCCB is shorter than that in classical mechanical CBs, the arc causes contact erosion. In this report, an arcless commutation is described that uses the molten metal-bridge voltage at the opening stage of the contacts. The magnitude of the molten-bridge voltage is just enough to turn on SiC-MOSFET devices under specific conditions. Arcless commutation of DC current was observed with a Ag-W vacuum contact and SiC-MOSFETs at current values of 78∼140 A.\",\"PeriodicalId\":117231,\"journal\":{\"name\":\"2016 IEEE 62nd Holm Conference on Electrical Contacts (Holm)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 62nd Holm Conference on Electrical Contacts (Holm)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HOLM.2016.7780005\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 62nd Holm Conference on Electrical Contacts (Holm)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HOLM.2016.7780005","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10

摘要

随着直流输电需求的不断增加,直流断路器(DCCBs)得到了广泛的研究。由机械开关、半导体器件和金属氧化物压敏电阻(MOV)元件组成的混合式直流断路器是一种具有低接触电阻和快速中断特性的有前途的器件。半导体器件通过机械开关的金属触点之间产生的电弧放电的持续电压接通。混合电弧断路器的电弧持续时间比传统机械电弧断路器短,但电弧会引起接触侵蚀。在本报告中,描述了在触点打开阶段使用熔融金属桥电压的无弧整流。熔桥电压的大小刚好足以在特定条件下开启SiC-MOSFET器件。在78 ~ 140 a的电流值下,用Ag-W真空触点和sic - mosfet观察到了直流电流的无弧换流。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A hybrid DC circuit breaker with vacuum contact and SiC-MOSFET for arcless commutation
DC circuit breakers (DCCBs) have been intensively studied because of increasing demand for DC power transmission. A hybrid DC circuit breaker that consists of mechanical switches, semiconductor devices, and metal-oxide varistor (MOV) elements is a promising device to provide low contact resistance and a fast interruption. The semiconductor devices are turned on by the sustaining voltage of arc discharge generated between the metal contacts of the mechanical switch. Though arc duration time in the hybrid DCCB is shorter than that in classical mechanical CBs, the arc causes contact erosion. In this report, an arcless commutation is described that uses the molten metal-bridge voltage at the opening stage of the contacts. The magnitude of the molten-bridge voltage is just enough to turn on SiC-MOSFET devices under specific conditions. Arcless commutation of DC current was observed with a Ag-W vacuum contact and SiC-MOSFETs at current values of 78∼140 A.
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