基于SU-8的纳米图案的制备及其作为纳米压印模具的应用

Junwei Su, F. Gao, Zhiyong Gu, Wen Dai, G. Cernigliaro, Hongwei Sun
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引用次数: 2

摘要

本文采用Ga+聚焦离子束(FIB)光刻技术在SU-8层上制备了三维纳米线图案,并将其用作纳米压印(NIL)模。在FIB铣削过程中,观察并分析了v型侧壁效应和相对剂量不足效应。利用不同的光束电流制备SU-8图形,发现较低的光束电流可获得边缘光滑、侧壁直的高质量图形。此外,还讨论了SU-8材料交联密度对FIB铣削效率的影响。利用这些线条图对SU-8型模具的变形和压印材料的填充率进行了热敏和紫外(UV) NIL研究。实验表明,压印压力和压印材料的物理性能是影响这一过程的关键因素。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fabrication of SU-8 based nanopatterns and their use as a nanoimprint mold
In this work, 3-D nanoscale line patterns were fabricated on SU-8 layers by Ga+ focused ion beam (FIB) lithography and used as Nanoimprint lithography (NIL) mold. Both V-shape side wall and opposing dose deficiency effect were observed and analyzed during the FIB milling process. Different beam currents were utilized to fabricate SU-8 pattern and it is found that the lower beam currents provide higher quality pattern with smooth edges and straight side walls. In addition, the impact of crosslink density of SU-8 material on the FIB milling efficiency was discussed. Both thermal and ultraviolet (UV) NIL were conducted using these line patterns to study the deformation of SU-8 mold and filling ratio of imprinting material. The experiments revealed that the imprint pressure and physic properties of imprinting material are the most critical factors in these NIL processes.
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