低于0.25-/spl μ m CMOS技术的片外驱动电路的工艺、电压和温度补偿

H. Chi, D. Stout, J. Chickanosky
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引用次数: 3

摘要

一种补偿过程、电压和温度(PVT)变化的控制电路已经开发出来,用于控制芯片外驱动电路,用于低于0.25-/spl mu/m的技术。片外驱动器(OCD)单独使用简单的控制方案,在输出端提供紧密的阻抗容限,改善输出信号波形。讨论了跨片长度变化(ACLV)、控制电路设计和片外驱动性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Process, voltage and temperature compensation of off-chip-driver circuits for sub-0.25-/spl mu/m CMOS technology
A control circuit that compensates for variations in process, voltage and temperature (PVT) has been developed to control off-chip-driver circuits used for sub-0.25-/spl mu/m technology. The off-chip-driver (OCD), alone with a simple control scheme, delivers a tight impedance tolerance at the output, improving the output signal waveforms. Across-chip length variation (ACLV), the controlled-circuit design and off-chip-driver performance are also discussed.
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