超过10nm FinFET技术的SRAM电池性能分析

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2016-04-25 DOI:10.1109/VLSI-TSA.2016.7480512

M. Ichihashi, Y. Woo, S. Parihar

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引用次数: 4

摘要

本文描述了SRAM单元在10nm FinFET技术之上的性能分析。通过伪内存宏的电路仿真，优化后的SRAM单元通过读出时延分析可以显示出与传统金属结构几乎相同的性能。HD(高密度)电池与HC(大电流)电池相比，由于其寄生电阻和电容较小，在大阵列宏中表现出更好的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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SRAM cell performance analysis beyond 10-nm FinFET technology

This paper describes the performance analysis of SRAM cell capability beyond 10-nm FinFET technology. Through the circuit simulation with a pseudo memory macro, optimized SRAM cell can demonstrate almost the same performance of traditional metal architecture though the read-out delay analysis. Comparing between HD (High-Density) and HC (High-Current) cell, HD cell shows better performance in the large array macro due to the less parasitic resistance and capacitance.

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2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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