考虑层叠母线和端子几何的交流电阻低噪声开关波形分析

K. Mitsui, K. Wada
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引用次数: 1

摘要

本文提出了一种低噪声开关波形的设计方法,同时考虑了层压母线和端子的交流电阻。由于趋肤效应和接近效应,交流电阻随频率的增大而增大,因此难以计算。从而可视化叠合母线几何形状与其交流电阻的关系,实现交流电阻的设计。此外,还显示了连接电容器和电源器件的端子几何形状对交流电阻分量的影响。高速开关工作时,会产生开关工作下的阻尼振荡波形,这是产生电磁噪声的原因之一。在这种情况下,振荡频率取决于转换器电路几何形状的寄生参数,通常超过10mhz。本文提出了考虑母线和端子几何形状的交流电阻,使阻尼系数大于仅直流电阻的阻尼系数,以抑制阻尼振荡水平。本文采用额定电压为500v、30a的降压变换器电路,模拟和实验了SiC-MOSFET漏源极电压的阻尼振荡。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analysis of Low Noise Switching Waveform Considering Both Laminated Bus Bar and Terminal Geometry for AC Resistance
This paper presents a design procedure of a low noise switching waveform considering AC resistance both the laminated bus bar and terminal geometry. It is hard to calculate the AC resistance which increases depending on the frequency because of skin and proximity effect. Hence the relationship between laminated bus bar geometry and its AC resistance is visualized to realize the design of AC resistance. Besides, it is shown that the terminal geometry, where the capacitor and power devices are connected, affects AC resistance components. The damped oscillation waveform, which is one of the causes of electromagnetic noise, under switching operations will occur under high-speed switching operation. In this case, the oscillation frequency depends on the parasitic parameters of the converter circuit geometry, and it is normally over 10 MHz. This paper presents that AC resistance considering the bus bar and terminal geometry, and it makes damping factor larger than that of only DC resistance to suppress the damped oscillation level. In this paper damped oscillation of drain-source voltage of SiC-MOSFET is simulated and experimented using buck converter circuit, rated at 500 V and 30 A.
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