R. Dupuis, M.R. Islam, R.V. Chelakara, J. Neff, K.G. Fertitta, A. Holmes, P. Grudowski, F.J. Ciuba
{"title":"aip - ingap量子阱异质结构中的短周期超晶格","authors":"R. Dupuis, M.R. Islam, R.V. Chelakara, J. Neff, K.G. Fertitta, A. Holmes, P. Grudowski, F.J. Ciuba","doi":"10.1109/LEOSST.1994.700530","DOIUrl":null,"url":null,"abstract":"We report the growth, characterization, and laser operation of high-quality InMP-InGaP and InA1GaP-InGaP short-period superlattice quantum-well (QW) heterostructures on GaAs substrates by low-pressure metalorganic chemical vapor deposition (MOCVD). The InGaP QW heterostructures have exhibited continuous-wave (CW) room-temperature (300K) laser operation at wavelengths as short as h-586 nm (Ehv -2.1 1 eV). This is the shortest room-temperature CW laser operation reported to date for any Ill-V material system.","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Short-period Superlattice InAiP-InGaP Quantum-well Heterostructures\",\"authors\":\"R. Dupuis, M.R. Islam, R.V. Chelakara, J. Neff, K.G. Fertitta, A. Holmes, P. Grudowski, F.J. Ciuba\",\"doi\":\"10.1109/LEOSST.1994.700530\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the growth, characterization, and laser operation of high-quality InMP-InGaP and InA1GaP-InGaP short-period superlattice quantum-well (QW) heterostructures on GaAs substrates by low-pressure metalorganic chemical vapor deposition (MOCVD). The InGaP QW heterostructures have exhibited continuous-wave (CW) room-temperature (300K) laser operation at wavelengths as short as h-586 nm (Ehv -2.1 1 eV). This is the shortest room-temperature CW laser operation reported to date for any Ill-V material system.\",\"PeriodicalId\":379594,\"journal\":{\"name\":\"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics\",\"volume\":\"53 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LEOSST.1994.700530\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOSST.1994.700530","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We report the growth, characterization, and laser operation of high-quality InMP-InGaP and InA1GaP-InGaP short-period superlattice quantum-well (QW) heterostructures on GaAs substrates by low-pressure metalorganic chemical vapor deposition (MOCVD). The InGaP QW heterostructures have exhibited continuous-wave (CW) room-temperature (300K) laser operation at wavelengths as short as h-586 nm (Ehv -2.1 1 eV). This is the shortest room-temperature CW laser operation reported to date for any Ill-V material system.
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