TiN金属栅极厚度对完全耗尽SOI mosfet物理和电学性能的影响

2005 IEEE International SOI Conference Proceedings Pub Date : 2005-12-27 DOI:10.1109/SOI.2005.1563523

J. Widiez, M. Vinet, T. Poiroux, P. Holliger, B. Previtali, P. Grosgeorges, M. Mouis, S. Deleonibus

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引用次数: 10

摘要

在本文中，我们报告了TiN金属栅极厚度对具有SiO/sub /和HfO/sub /栅极介质的完全耗尽(FD)绝缘体上硅(SOI) MOS晶体管的影响。阈值电压、电氧化层厚度(EOT)、栅极漏电流和沟道迁移率都受到影响。TiN层越小，晶体管的性能越好。这是由于当TiN厚度减小时电荷效应降低。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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TiN metal gate thickness influence on fully depleted SOI MOSFETs physical and electrical properties

In this paper, we report the influence of the TiN metal gate thickness on fully depleted (FD) silicon-on-insulator (SOI) MOS transistors with SiO/sub 2/ and HfO/sub 2/ gate dielectrics. The threshold voltage as well as the electrical oxide thickness (EOT), the gate leakage current and the channel mobility are impacted. Smaller the TiN layer is, better are the transistors characteristics. This is due to a lower charge effect when the TiN thickness decreases.

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2005 IEEE International SOI Conference Proceedings

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