650伏氮化镓:最高质量-最高性能驱动市场斜坡

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI:10.1109/BCICTS.2018.8550845

P. Parikh, YiFeng Wu, Likun Shen, J. Gritters, T. Hosoda, R. Barr, Kurt V. Smith, K. Shono, J. McKay, H. Clement, S. Chowdhury, S. Yea, Peter Smith, L. McCarthy, R. Birkhahn, P. Zuk, Y. Asai

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引用次数: 0

摘要

在成功通过JEDEC要求和汽车(Q101)要求[1]，[2]，以及建立具有相关失效模式的固有寿命[2]之后，高压GaN现在正在变换器/逆变器应用中迅速发展。在关键应用中，用于高性能游戏和加密货币挖掘以及数据中心电源等用途的紧凑高效(包括钛级)电源处于领先地位[3]。汽车应用包括车载充电器(单/双向)，dc-dc转换器和极式充电器正在设计中。最后，工业用户已将氮化镓用于紧凑型伺服驱动器和光伏逆变器[4]。本文将回顾高压氮化镓的设计、性能和可制造性，建立最高水平的质量和可靠性标准，以及导致市场增长的关键特征。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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650 Volt GaN: Highest Quality-Highest Performance Drives Market Ramp

After successful qualification under JEDEC requirements as well as Automotive (Q101) requirements [1], [2], along with the establishment of intrinsic lifetimes with associated failure modes [2], high voltage GaN is now ramping in converter/inverter applications. Among the key applications, compact & high efficiency (including Titanium class) Power supplies for uses such as high performance gaming & cryptocurrency mining as well as data center power are leading the way [3]. Automotive uses including onboard chargers (uni/bi-directional), dc-dc converters and pole chargers are being designed in. Finally industrial users have adopted GaN for compact Servo drives and PV inverters [4]. This paper will review the design, performance and manufacturability of high voltage GaN, establishment of the highest level of quality and reliability standards and key features that led to market ramp.

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2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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