金属- mos2界面接触电阻(Rc)的解析分析

M. Hossain, M. Sanaullah, A. H. Yousuf, Azzedin Es-Saki, M. Chowdhury
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引用次数: 1

摘要

二硫化钼(MoS2)与石墨烯一样,是一种新兴的二维材料,可用于固态、光电和许多其他器件。MoS2具有良好的电子带隙。石墨烯几乎为零带隙,这将导致MOSFET不切实际的开关操作。基于二硫化钼的开关器件将不会有这种限制。二硫化钼的二维平面特性将适合在纳米尺度上进行集成和缩放。由于其独特的电、热、光学和机械稳定性,二硫化钼被认为是后硅和甚高频时代的新型超级材料。然而,MoS2触点失配问题将导致基于MoS2的器件性能降低。在这项工作中,我们研究了MoS2接触电阻(这是最关键的参数之一)在带结构,肖特基势垒和其他材料特性方面的研究。研究了W, Sn, Pt, Au, Sc和Cu等几种材料,以确定与MoS2的适当接触电阻。在本分析中,我们得出结论,钨(W)是最合适的材料,可以为具有MoS2沟道的p型和n型mosfet提供低接触电阻。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analytical analysis of the contact resistance (Rc) of metal-MoS2 interface
Molybdenum disulfide (MoS2) is a new emerging 2D material like graphene for applications in solid state, optoelectronic and many other devices. MoS2 has good bandgap for electronic applications. Graphene has almost zero bandgap and that will lead to impractical switching operation for MOSFET. MoS2 based switching devices will not have this limitation. The 2D flat nature of MoS2 would be suitable for integration and scaling at nanoscale dimensions. Due to its unique electrical, thermal, optical, and mechanical stability, MoS2 is considered as the new super-material for post-silicon and very high frequency era. However, the MoS2-contact mismatch issues would lead to the reduction of MoS2 based device performance. In this work we have investigated the MoS2 contact resistance (which is one of the most critical parameters) in terms of band structure, Schottky barrier and other material properties. Several material such as W, Sn, Pt, Au, Sc and Cu are studied to determine the appropriate contact resistance with MoS2. In this analysis we have concluded that Tungsten (W) is the most suitable material that gives a low contact resistance for both p- and n-type MOSFETs with MoS2 channel.
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