150MS/s的14位分段DEM DAC，在Nyquilst波段的SFDR大于83dB

2007 IEEE Symposium on VLSI Circuits Pub Date : 2007-06-14 DOI:10.1109/VLSIC.2007.4342714

Kok Lim Chan, Jianyu Zhu, I. Galton

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引用次数: 21

摘要

分段DEM技术允许在编码器复杂性和单位电流转向单元数量之间进行有效权衡，使150 MS/s的DAC在奈奎斯特频段具有大于83 dB的SFDR。0.18 mum CMOS IC的有源面积为3 mm2，功耗为127 mW。

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A 150MS/s 14-bit Segmented DEM DAC with Greater than 83dB of SFDR Across the Nyquilst band

A segmented DEM technique that allows an efficient tradeoff between encoder complexity and the number of unit current-steering cells enables a 150 MS/s DAC with greater than 83 dB of SFDR across the Nyquist band. The 0.18 mum CMOS IC has an active area of 3 mm2 and dissipates 127 mW.

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来源期刊

2007 IEEE Symposium on VLSI Circuits

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