OxRRAM细胞单事件效应的SPICE水平分析

2013 14th Latin American Test Workshop - LATW Pub Date : 2013-04-03 DOI:10.1109/LATW.2013.6562684

K. Castellani-Coulié, M. Bocquet, H. Aziza, J. Portal, W. Rahajandraibe, C. Muller

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引用次数: 3

摘要

由于新兴的非易失性存储器，基于电阻开关机制，是克服未来功率问题的有吸引力的候选人，本文建议分析oxrram周围电路中的单事件效应。给出了粒子穿过电路的影响。即使在普通技术中SEE发生的概率很低，也指出了阈值效应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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SPICE level analysis of Single Event Effects in an OxRRAM cell

As emerging non-volatile memories, based on resistive switching mechanisms, are attractive candidates to overcome future power issues, this paper proposes to analyze Single Event Effects in circuitry surrounding OxRRAMs. The impact of a particle crossing the circuit is presented. A threshold effect is pointed out even if the probability of SEE occurrence is shown to be low in common technologies.

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2013 14th Latin American Test Workshop - LATW

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